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| FMM5803X 27.5-31.5GHz Power Amplifier MMIC FEATURES * * * * * * High Output Power: P1dB = 30dBm (Typ.) High Gain: G1dB = 14dB (Typ.) High PAE: add = 20% (Typ.) Wide Frequency Band: 27.5-31.5 GHz Impedance Matched Zin/Zout = 50 0.25m PHEMT Technology DESCRIPTION The FMM5803X is a high-gain, wide band 3-stage MMIC amplifier designed for operation in the 27.5-31.5 GHz frequency range. This amplifier has an input and output designed for use in 50 systems.This device is well suited for point-to-point, and point-to-multi-point(LMDS) communication applications. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Drain Voltage Gate Voltage Input Power Storage Temperature Operating Backside Temperature Symbol VDD VGG Pin Tstg Top Condition Rating 10 -3.0 25 -65 to +175 -40 to +85 Unit V V dBm C C Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 6 volts. 2. The forward and reverse gate currents should not exceed 4.0 and -0.33 mA respectively. 3. This product should be hermetically packaged ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Frequency Range Output Power at 1 dB G.C.P. Power Gain at 1 dB G.C.P. Drain Current Power-Added Efficiency Input Return Loss Output Return Loss Symbol f P1dB G1dB Iddrf add RLin RLout VDD = 6V f = 27.5 ~ 31.5 GHz *: at f = 27.5-30.0 GHz **: at f = 30.0-31.5 GHz IDD = 650mA (Typ.) ZS = ZL = 50 28 12* 10** Conditions Min. Limits Typ. Max. Unit GHz 19* 17** 950 dBm dB mA % dB dB 27.5 - 31.5 30 14* 12** 700 20 -12 -8 Note: RF parameter sample size 10pcs./wafer. Criteria (accept/reject)=(0/1) G.C.P.: Gain Compression Point Edition 1.1 June 2000 1 FMM5803X 27.5-31.5GHz Power Amplifier MMIC P1dB, G1dB vs. FREQUENCY 34 32 30 P1dB (dBm) 28 26 24 22 20 18 IDD = 650mA VDD = 6V P1dB 18 G1dB 16 14 12 27 28 29 30 31 32 Frequency (GHz) OUTPUT POWER vs. IMD VDD = 6V IDD = 650mA f = +10MHz 28GHz IM3 31GHz IM3 -20 -25 IM3 (dBc) -30 -35 -40 -45 -50 13 15 17 19 21 23 25 27 29 Total Output Power (dBm) BONDING LAYOUT VGG VDD1 VDD2 VDD3 VDD4 VDD5 2 G1dB (dB) FMM5803X 27.5-31.5GHz Power Amplifier MMIC ASSEMBLY DRAWING VGG 0.15F VDD 0.15F 220pF 220pF RFin RFout 220pF 0.15F VDD S-PARAMETERS VDD = 6V, IDS = 650mA FREQUENCY S11 (MHZ) MAG ANG 24000 24500 25000 25500 26000 26500 27000 27500 28000 28500 29000 29500 30000 30500 31000 31500 32000 32500 33000 33500 .685 .618 .547 .487 .442 .420 .415 .404 .379 .337 .283 .227 .171 .130 .126 .171 .274 .423 .565 .668 36.1 16.4 -7.8 -37.2 -71.2 -106.9 -138.7 -166.3 169.0 148.9 130.6 113.1 99.3 91.2 80.2 60.5 29.4 -6.5 -38.7 -64.6 S21 MAG 3.270 3.920 4.650 5.380 6.100 6.540 6.620 6.540 6.500 6.520 6.450 6.390 6.310 6.270 6.130 5.800 5.250 4.430 3.310 2.330 S12 ANG MAG .001 .001 .002 .002 .002 .003 .003 .003 .003 .004 .004 .005 .005 .006 .008 .008 .008 .008 .007 .006 S22 ANG MAG .230 .152 .111 .129 .176 .227 .272 .306 .328 .338 .343 .341 .339 .347 .370 .415 .476 .533 .569 .589 ANG 15.4 -12.0 -57.1 -106.0 -136.9 -157.6 -174.5 170.7 156.0 140.8 124.5 106.4 85.5 61.8 35.9 9.7 -15.7 -39.0 -58.4 -73.2 -30.4 -59.5 -89.6 -121.0 -155.1 171.1 137.8 107.0 76.5 45.8 15.7 -14.8 -45.0 -77.3 -111.1 -147.2 173.0 133.0 93.7 57.4 53.8 34.9 15.1 -9.3 -35.1 -63.8 -97.3 -120.0 -146.2 -173.6 159.7 136.1 110.3 84.9 54.5 24.3 -11.8 -49.4 -83.8 -117.9 Download S-Parameters, click here 3 FMM5803X 27.5-31.5GHz Power Amplifier MMIC CHIP OUTLINE VGG VDD2 1230 1500 2010 VDD3 2950 Unit: m VDD1 270 2080 1925 970 990 1030 RFin RFout 155 0 1230 120 VDD4 VDD5 Chip Size: 334030m x 208030m Chip Thickness: 7020m Pad Dimensions: 1. DC 80m x 80m 2. RF 120m x 80m 1500 2010 2950 3225 3340 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not ingest. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0200M200 4 |
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